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品牌isc
型号mje13005
材料硅(si)
封装形式to-220
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供应mje13005 无锡固电半导体厂家热销三极管
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iscsilicon npn power transistor
description
·collector–emitter sustaining voltage
: vceo(sus)= 400v(min.)
·collector saturation voltage
: vce(sat)= 0.6(max) @ ic= 2.0a
·switching time
: tf= 0.9μs(max.)@ ic= 2.0a
applications
·designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220v switchmode applications such as switching
regulators,inverters,motor controls,solenoid/relay drivers
and deflection circuits.
absolute maximum ratings(ta=25℃)
symbol
parameter
value
unit
vcev
collector-emitter voltage
700
v
vceo
collector-emitter voltage
400
v
vebo
emitter-base voltage
9
v
ic
collector current-continuous
4
a
icm
collector current-peak
8
a
ib
base current
2
a
ibm
base current-peak
4
a
ie
emitter current
6
a
iem
emitter current-peak
12
a
pc
collector power dissipation
ta=25℃
2
w
collector power dissipation
tc=25℃
75
ti
junction temperature
150
℃
tstg
storagetemperature range
-65~150
℃
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